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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT Module 2MBI200TA-060 MS5F 5291
Fuji Electric Co.,Ltd. Matsumoto Factory
Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira
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Revised Records
Date Classification Ind. Content Applied date Issued date Drawn Checked
T.Miyasaka K.Yamada T.Miyasaka K.Yamada
Approved
Oct.-23-'02
enactment
T.Fujihira
Nov.-29-'02
Revision
a
Revised Reliability test conditions (P7/14)
Y.Kobayashi
T.Fujihira
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2MBI200TA-060
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
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3. Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Ic Ic pulse IF IF pulse Collector Power Dissipation Junction temperature Storage temperature Isolation voltage Screw Torque
(*1)
Conditions Ic=1mA Duty=100 % 1ms Duty=50 % 1ms 1 device
Maximum Ratings 600 20 200 400 200 400 780 150 -40~ +125
Units V V A
Pc Tj Tstg Viso Mounting(*2) Terminals (*2)
W V Nm
AC : 1min.
2500 3.5 3.5
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 N m (M5) Terminal 2.5~3.5Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Characteristics Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Allowabe avalanche energy during short circuit cutting off (Non-repetitive) 5. Thermal resistance characteristics Characteristics Items Thermal resistance (1 device) Contact Thermal resistance Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD With thermal compound min. typ. 0.025 Max. 0.160 0.51 Units / PAV Ic > 400A, Tj = 125 140 mJ Symbols ICES IGES VGE = VCE = Conditions 0 V, 0 V, 20 V, 15 V 200 A 0V 10 V 1 MHz 300 V 200 A 15 V 16 200 A 200 A Chip Terminal trr IF = VCE = VGE = Ic = 600 V 20 V 200 mA Chip Terminal min. 6.2 IF = typ. 6.7 1.6 1.8 20000 3600 3100 0.6 0.3 0.1 0.6 0.05 1.75 2.0 Max. 2.0 400 7.7 2.4 1.2 0.6 1.2 0.45 2.5 0.3 s V s Units mA nA V V
VGE(th) VCE =
VCE(sat) VGE =
Ic = Cies Coes Cres ton tr tr(i) toff tf VF
VGE =
VCE = f= Vcc = Ic = VGE = RG =
pF
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
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6. Indication on module
2MBI200TA-060
200A 600V
Lot No.
Place of manufucturing
7. Applicable category This specification is applied to IGBT Module named 2MBI200TA-060
8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time

90%
0V
L
0V V GE trr Irr
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
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10. Definition of the allowable avalance energy during short circuit cutfing of.
-VCEP 1 2
PAV= IC -ICP
xVCEPxICPxtf(SC)
VCE
tf(SC)
11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.
12. Packing and Labeling
Packing box
Display
Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box
* Each modules are packed with electrical protection.
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13. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test methods and conditions : a 40N : 101 sec. : 2.5 ~ 3.5 Nm (M5) Reference Acceptnorms Number ance EIAJ of sample number ED-4701 A - 111 Method 1 A - 112 Method 2 A - 121 5 5 (1:0) (1:0)
Mechanical Tests
3 Vibration
4 Shock
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker
Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : a 10G Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000G Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 853 Relative humidity : 855% Test duration : 1000hr. Test temp. : 121 Atmospheric pressure : 2.03x10 Pa (Reference value) Test duration : 20hr. Test temp. : Low temp. -40 High temp. 125
+3 -5 +5 -5 5
5
(1:0)
A - 122
5
(1:0)
B - 111 B - 112 B - 121
5 5 5
(1:0) (1:0) (1:0)
B - 123
5
(1:0)
Environment Tests
5 Temperature Cycle
B - 131
5
(1:0)
Dwell time Number of cycles 6 Thermal Shock Test temp.
RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
B - 141
5
(1:0)
Low temp. 0 a Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
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Reliability Test Items
Test categories Reference Acceptnorms Number ance EIAJ of sample number ED-4701 D - 313 5 (1:0)
Test items 1 High temperature Reverse Bias
Test methods and conditions
+0
Test temp. Bias Voltage Bias Method Test duration
: Ta = 125 -5 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
+0
2 High temperature Bias
D - 323
5
(1:0)
Test temp. Bias Voltage Bias Method Test duration
Endurance Tests
: Ta = 125 -5 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. B - 121 5 (1:0) : : : : : : : : 85 +-3 C 85 +-5% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
o
3 Temperature Humidity Bias
Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp.
4 Intermitted Operating Life (Power cycle) ( for IGBT )
D - 322
5
(1:0)
Number of cycles :
Failure Criteria
Item Electrical characteristic Characteristic Leakage current Gate threshold voltage Saturation voltage Forward voltage Thermal IGBT resistance FWD Isolation voltage Visual inspection Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. The visual sample or Symbol ICES IGES VGE(th) VCE(sat) VF VGE VCE VF Viso USLx1.2 mV Broken insulation Failure criteria Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 Unit mA A mA V V mV Note
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Reliability Test Results
Test categories Reference Number norms of test EIAJ ED-4701 sample A - 111 Method 1 A - 112 Method 2 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias B - 131 B - 141 D - 313 D - 323 B - 121 D - 322 5 5 5 5 5 5 0 0 0 0 0 0 B - 123 5 0 A - 121 A - 122 B - 111 B - 112 B - 121 5 5 5 5 5 0 0 0 0 0 5 0 5 Number of failure sample 0
Test items
1 Terminal Strength
Mechanical Tests
(Pull test) 2 Mounting Strength
Endurance Tests
Environment Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
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600
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.)
600
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.)
500
500
Collector current : Ic [ A ]
400
Collector current : Ic [ A ]
VGE= 20V
15V 12V
10V
400
VGE= 20V
15V
12V
10V
300
300
200
200
100
100
8V
8V
0 0 1 2 3 4 5 0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
600
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
12
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.)
10
Tj= 25C
Collector current : Ic [ A ]
Tj= 125C
400
Collector - Emitter voltage : VCE [ V ]
8
6
200
4
2
Ic=400A Ic=200A Ic=100A
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
50000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=200A, Tj= 25C
25
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
10000
300
15
5000
200
10
1000
Coes Cres
100
5
500 0 5 10 15 20 25 30 35
0 0 200 400 600 800 1000 1200
0 1400
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
400
20
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1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm, Tj= 25C
ton toff
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 16ohm, Tj= 125C
ton toff tr
Switching time : ton, tr, toff, tf [ nsec ]
tr
100
Switching time : ton, tr, toff, tf [ nsec ]
100
tf
tf
10 0 100 200 300 400
10 0 100 200 300 400
Collector current : Ic [ A ]
Collector current : Ic [ A ]
5000
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=+-15V, Tj= 25C
30
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm
Switching time : ton, tr, toff, tf [ nsec ]
toff
1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
ton tr
Eon(125C)
20
Eon(25C) Eoff(125C) Eoff(25C)
10
100
tf
Err(125C) Err(25C)
10 1 10 80
0 0 200 400
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
60
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=+-15V, Tj= 125C
600
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=16ohm, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
50
Eon
500
40
Collector current : Ic [ A ]
300
400
30
300
20
Eoff
200
10
100
Err
0 10 100 0 0 200 400 600 800
Gate resistance : Rg [ ohm ]
Collector - Emitter voltage : VCE [ V ]
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[ Inverter ] Forward current vs. Forward on voltage (typ.)
400 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=16ohm
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
300
Tj=125C
Tj=25C
trr(125C)
Forward current : IF [ A ]
200
100
trr(25C)
100
Irr(125C)
Irr(25C)
0 0 1 2 3 30 0 100 200 300 400
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
1
FWD
Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
0.1
0.01
1E-3 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
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Warnings
- This product shall be used within its abusolute maximun rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Conect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve(Thechnical Rep.No:MT6M4057) No.:MT6M4057 - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact probrem. - According to the outline drawing, select proper length of screw for main terminal. Longer screws may break the case. - Use this product with keeping the cooling fin's flatness between screw holes within 100um and the rouphness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a cirtical accident. 100um10um - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA - If excessive static electricity is applied to the control terminals, the devices can be broken. Implement some countermeasures against static electricity.
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Cautions
Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
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